Available Technologies
# of Displayed Technologies: 10 / 17
Applied Category Filter (Click To Remove): Semiconductors, Circuits, & Electronic Components
Bio-Matched Horn: A Novel 1-9 GHz On-Body Antenna for Low-Loss Biomedical Telemetry with Implants
TS-065135 — The use of wearable health devices has more than tripled in recent years due to the ability of these products to collect health data to detect potential health events (e.g., heart attacks), manage chronic diseases, and track physical activity. Wearable technologies have been shown to decrease the nu…
- College: College of Engineering (COE)
- Inventors: Blauert, John; Kiourti, Asimina
- Licensing Officer: Randhawa, Davinder
Invention of ultra-wide bandgap oxide semiconductor with p-type conductivity
TS-063961 — The Need
In the realm of power device technologies, addressing the growing demand for efficient, high-performance semiconductors is paramount. The current gap in the availability of a p-type β-Ga2O3 semiconductor poses a significant challenge, hindering the progress of device fabrication metho…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
Ultrawide bandgap oxide semiconductor LiGaO2 with p-type conductivity for power device applications
TS-063784 — The Need
In the realm of power electronics, the industry is seeking advanced semiconductor materials that can address the ever-growing demand for high power density and high-frequency applications. Beta phase gallium oxide (β-Ga2O3) with an ultrawide bandgap (UWBG) of approximately 4.8 eV emer…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
Suppressing background carbon incorporation using laser-assisted MOCVD growth of nitride-based semiconductors
TS-063717 — The Need
In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan
- Licensing Officer: Randhawa, Davinder
Laser Imaging of Gases for Real-Time Determination of Concentration and Location
TS-063051 — A stand-off gas detection system with active, laser-based sensing and imaging capabilities for commercial use
There is a critical need for a reliable, cost-effective, and safe method to detect gas leaks, particularly in gas lines to ensure the safety of service providers and customers. Distribution companies receive over 100,000 calls per year responding to gas odors, indicating potential leaks. The major…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Ball, Christopher; Fink, Douglas "Rudy"; Fuller, Earl; Mooney, Douglas; Ringel, Brett; Ronningen, TJ
- Licensing Officer: Randhawa, Davinder
Substrates for vertical power devices
TS-062951 — The Need
In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
GaAsSb-AlGaAsSb Heterostructure Avalanche Photodiode
TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise and …
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
- Licensing Officer: Randhawa, Davinder
Antimonide based Separate Absorption Charge and Multiplication Avalanche Photodiode
TS-062892 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise an…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
- Licensing Officer: Randhawa, Davinder
Lateral Interband Type-II Engineered (LITE) Detector
TS-062847 —
Avalanche photodiodes (APDs) that target a wavelength of 1550 nm have several applications ranging from optical communications to imaging to single photon detection. There is increasing interest in APDs for longer wavelengths. A distinctive feature of an APD is high sensitivity due to the gain ach…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Kodati, Sri Harsha; Lee, Seunghyun; Ronningen, TJ
- Licensing Officer: Randhawa, Davinder
Formation of carbon containing semi-insulating layers in β-Ga2O3 based structures and devices
TS-061850 — High-quality beta-gallium oxide (β-Ga2O3) based semi-insulating layers enable high power/high-frequency electronics, ultraviolet optoelectronics, and more.
The Need
β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, challenges exist in the controlled doping of semi-insulating layers of β-Ga2O3, limiting the material’s full potenti…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
