# of Displayed Technologies: 19 / 19

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Open Circuit Voltage Photodetector
TS-065426 — Photodetectors are devices that detect light and convert it into an electrical signal. They operate based on the photoelectric effect, in which photons (light particles) strike the semiconductor material, creating electron-hole pairs that lead to the flow of electrical current that can be measured.
Existing photodetectors are susceptible to various noise sources, such as thermal and electronic. The noise can degrade the signal-to-noise ratio and affect the accuracy of measurements, particularly in low-light conditions. This technology is an open-circuit voltage photodetector (OCVP) that…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Fuller, Earl; Kazemi, Alireza; Khalil, Waleed; Ronningen, TJ; Smith, Dale "Shane"; Specht, Teressa; Tantawy, Ramy "Ramy"
  • Licensing Officer: Zinn, Ryan

Monolithically Integrated Tunnel Junction-Based GaN Light Emitting Transistors
TS-065398 — Emissive display technologies (e.g., OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays, which rely on external light sources, emissive displays generate light, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications, including mobile devices, AV/VR headsets, and wearable devices.
Although emissive displays are integrated into many electronic devices, they face some challenges. One of the primary issues is the integration of LEDs and electronic drivers when scaling into mesa dimensions. The mesa is a crucial parameter in display manufacturing as it determines the size of th…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Jamal-Eddine, Zane; Joishi, Chandan "Chandan"; Rahman, Sheikh Ifatur
  • Licensing Officer: Zinn, Ryan

High-K Dielectric barriers to suppress internal photoemission photocurrents
TS-063471 — In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; McGlone, Joseph "Joe"; Wriedt, Nathan
  • Licensing Officer: Zinn, Ryan

Monolayer Etching of Wurtzite GaN/AlGaN/AlN Using Cyclic O2 Plasma and Atomic Ga/Al Flux Exposure
TS-063466 — In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Dheenan, Ashok; Rahman, Sheikh Ifatur; Wriedt, Nathan
  • Licensing Officer: Zinn, Ryan

3D subwavelength photonic detector coupled with dielectric resonator antenna
TS-063055 — New LWIR detector combining a dielectric resonator antenna (DRA) with a semiconductor absorber for improved signal, noise, and speed performance
Long Wavelength Infrared (LWIR) detectors are crucial in various fields, but traditional detectors face significant drawbacks in terms of size, thermal noise, and coupling efficiencies. Current detectors use cryogenic cooling in the form of mercury cadmium telluride (MCT), a significant drawback d…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Ball, Christopher; Kazemi, Alireza; Ronningen, TJ; Shu, Qingyuan
  • Licensing Officer: Zinn, Ryan

Surface barrier engineering using AlGaO/GaO
TS-063001 — A new method of surface barrier engineering that introduces a linearly graded (AlxGa1-x)2O3 cap layer. This improves the Schottky barrier at the surface which results in a higher breakdown field.
Ga2O3 is a promising ultra-widebandgap semiconductor with many applications in power switching and RF electronics. Realizing those improvements requires efficient field management design to prevent premature breakdown due to electric field crowding at the device edges. There is a need to develop t…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Dhara, Sushovan
  • Licensing Officer: Zinn, Ryan

Light Source in Silicon Photonics
TS-062691 — The continued push for high speed, low power, and compact solutions has given rise to the field of integrated optics/photonics, which aims to combine the high bandwidth and low loss transmission of fiber optic technology with the large device density and high production volume of modern microelect…
  • College: College of Engineering (COE)
  • Inventors: Reano, Ronald; Patton, Ryan; Wood, Michael
  • Licensing Officer: Zinn, Ryan

RF Energy Harvesting Wireless Mobile Device Charger
TS-062601 — Only a small fraction of the radio frequency (RF) energy transmitted by smartphones and other wireless devices is used to communicate with a wireless access point. It would be useful to collect or harvest the unused RF signals in order to convert them to direct current (DC) power and supplement th…
  • College: College of Engineering (COE)
  • Inventors: Chen, Chi-Chih; Koksal, C. Emre; Shroff, Ness; Tallos, Roland
  • Licensing Officer: Zinn, Ryan

Passive RF Rectifier Circuit Design with Harmonic Harvester
TS-062596 — Conventional rectifying circuit designs convert alternating-current (AC) signals into direct-current (DC) signals via the used of diodes. Low-barrier Schottky diodes are used in low AC power cases such as with ambient radio frequency (RF) signals. Ideally, each diode is only turned on during the p…
  • College: College of Engineering (COE)
  • Inventors: Chen, Chi-Chih
  • Licensing Officer: Zinn, Ryan

Method to Create Patterned Thin Films of Lithium Niobate for Hybrid Integrated Photonics
TS-062492 — Photonic integration is driven by demand for smaller size, lower cost, lower power consumption, easier assembly, higher reliability, and greater data density in modern photonic devices and systems. Among the many platforms, silicon photonics is particularly promising for photonic integration due t…
  • College: College of Engineering (COE)
  • Inventors: Reano, Ronald; Chen, Li
  • Licensing Officer: Zinn, Ryan

Use of electromagnetic signature to determine the type of integrated circuit
TS-062488 — Currently, the main method used to detect counterfeit integrated circuits (IC's) is a very simplistic approach based on visual inspection. Unfortunately, many sophisticated counterfeit IC's are indistinguishable from authentic since visually they look almost exactly the same. Dr. Robert…
  • College: College of Engineering (COE)
  • Inventors: Lee, Robert; Chapman, Gregg; Nechiyil, Aditya
  • Licensing Officer: Zinn, Ryan

Weak Field Skyrmion Nucleation for Spintronic Memory Devices
TS-054326 — Magnetic skyrmions are unique and stable magnetic spin structures extensively studied in condensed matter physics. They are actively being developed due to their potential application in advanced memory chips. These skyrmion-based memory structures have advantages such as high density, low energy consumption, and resistance to disturbances, making them an attractive option for next-generation data storage.
Although skyrmions have the potential to revolutionize the memory industry, they are currently limited by materials and manufacturing practices. Hence, it is essential to identify new materials where small, stable skyrmions can be reliably manufactured and manipulated. This technology produces …
  • College: College of Engineering (COE)
  • Inventors: Wang, Binbin; McComb, David
  • Licensing Officer: Zinn, Ryan

Fiber-to-fiber platform for multi-layer ferroelectric on insulator waveguide devices
TS-050208 — The invention is a fiber-to-fiber solution that allows the advantages of lithium niobate on insulator integrated photonic chips to be exploited in real world fielded systems.
Technology is advancing faster than ever, with major demand for instant communication and instant information among other industries. In order to facilitate this ever-growing industry, a technology called waveguides were invented. A waveguide confines the wave to propagate in one dimension, so tha…
  • College: College of Engineering (COE)
  • Inventors: Reano, Ronald; Nagy, Jonathan "Tyler"; Patton, Ryan; Prabhakar, Karan
  • Licensing Officer: Zinn, Ryan

Dielectric heterojunction device
TS-048644 — The potential of different materials for vertical power switching is often assessed by calculating the Baliga Figure of Merit (BFOM). In the case of wide and ultra-wide bandgap materials, the high breakdown fields and the relatively good transport properties make the BFOM significantly higher than…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Moore, Wyatt; Xia, Zhanbo
  • Licensing Officer: Zinn, Ryan

Field Effect Transistor for High Power Millimeter-Wave Applications
TS-042088 — Transistor structure with high breakdown voltage at high frequency operation
A new generation of high throughput, efficient communication networks and sensors can be enabled through the use of millimeter scale wave regimes. However, current semiconductor materials (such as AlGaN/GaN) have a reduction in breakdown voltage as operating frequency increases, which leads to low…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Wang, Caiyu; Xia, Zhanbo
  • Licensing Officer: Zinn, Ryan

Referenceless and Frequency Independent Radio Reciever
TS-037378 — A radio receiver that operates without the need for locally generated reference signals.
A radio frequency signal may typically consist of a single frequency carrier signal, modulated with some information signal. The purpose of a receiver is to extract the information signal from the carrier. This is commonly accomplished by mixing the received signal with one or more local reference…
  • College: College of Engineering (COE)
  • Inventors: Novak, Markus; Bojja venkatakrishnan, Satheesh; Volakis, John
  • Licensing Officer: Zinn, Ryan

Method to enhance light extraction efficiency in tunnel-injected III-Nitrate ultraviolet LEDs
TS-037365 — A novel method to enhance the transverse-electric and transverse-magnetic polarized light via relfective surfaces on top of a tunnel junction based LED structure.
III-Nitride ultraviolet light emitting diodes (UV LEDs) have a variety of promising applications, including sterilization and water purification. Currently, UV LEDs use an absorbing p-GaN top layer for hole injection, which reduces light extraction efficiency to lower than 20%. UV light emissions …
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Akyol, Faith; Jamal-Eddine, Zane; Zhang, Yuewei
  • Licensing Officer: Zinn, Ryan

On-Chip Optical Polarization Rotator
TS-015265 — Chip-scale broadband and tunable polarization rotator with low insertion loss whose purpose is to dynamically control optical polarization in photonic integrated circuits
Optical polarization controllers and rotators are necessary components to control optical polarization in bulk bench-scale optics. Current approaches to achieve on-chip polarization control on a chip include asymmetric gratings, waveguides with asymmetric slanted sidewalls, dual core waveguides wi…
  • College: College of Engineering (COE)
  • Inventors: Reano, Ronald; Sun, Peng
  • Licensing Officer: Zinn, Ryan

Efficient Graded III-Nitride Nanowires
TS-014952 — A nanowire that overcomes defect formation normally found in LEDs, leading to higher charge density.
Unlike traditional light bulbs, Light Emitting Diodes (LEDs) use less power, last longer, and contain no environmentally harmful substances. However, LEDs struggle with technical errors, such as lattice mismatch and large resistances. As adoption increases, it is necessary to develop LEDs that are…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Myers, Roberto
  • Licensing Officer: Zinn, Ryan

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