TS-076541 — Ga2O3 ultraviolet photodetectors are increasingly being deployed in applications such as water purification, industrial process monitoring, environmental sensing, defense systems, and advanced manufacturing. However, many emerging wide-bandgap photodetector technologies exhibit nonlinear responses…

TS-076325 — UV LEDs, particularly those operating at shorter wavelengths, face persistent challenges in achieving high optical efficiency. Conventional device architectures can suffer from significant internal absorption and inefficient light extraction, limiting wall-plug efficiency and increasing power requ…

TS-074715 — Next‑generation power electronics require devices that can operate efficiently under high voltages, high currents, and harsh environments while maintaining fast, reliable switching. Existing electrically gated solutions in wide and ultra‑wide bandgap semiconductors face tradeoffs among robustn…

TS-073373 — Next‑generation power electronic systems require devices that deliver high breakdown voltage, large current handling, and fast switching while maintaining manufacturability at scale. Vertical FinFETs offer compelling performance advantages over incumbent bipolar and planar technologies, but thei…

TS-067551 — Gallium Oxide (Ga2O3) is an inorganic compound with semi-conductivity properties (e.g., a large bandgap) that can be used for developing power electronics, UV photodetectors, solar cells, and sensors. βeta-Ga2O3, a polymorph, has a distinct advantage over other semiconductors that have high cri…

TS-065398 — Emissive display technologies (e.g., OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays, which rely on external light sources, emissive displays generate light, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications, including mobile devices, AV/VR headsets, and wearable devices.

TS-063471 — In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…

TS-063466 — In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…

TS-063001 — A new method of surface barrier engineering that introduces a linearly graded (AlxGa1-x)2O3 cap layer. This improves the Schottky barrier at the surface which results in a higher breakdown field.

TS-048644 — The potential of different materials for vertical power switching is often assessed by calculating the Baliga Figure of Merit (BFOM). In the case of wide and ultra-wide bandgap materials, the high breakdown fields and the relatively good transport properties make the BFOM significantly higher than…