Available Technologies
# of Displayed Technologies: 9 / 9
Applied Category Filter (Click To Remove): Electronics & Photonics
A device for improving the breakdown performance of gallium oxide semiconductors
TS-067551 — Gallium Oxide (Ga2O3) is an inorganic compound with semi-conductivity properties (e.g., a large bandgap) that can be used for developing power electronics, UV photodetectors, solar cells, and sensors. βeta-Ga2O3, a polymorph, has a distinct advantage over other semiconductors that have high cri…
- College: College of Engineering (COE)
- Inventors: Dheenan, Ashok; Dhara, Sushovan; Rajan, Siddharth
- Licensing Officer: Zinn, Ryan
Monolithically Integrated Tunnel Junction-Based GaN Light Emitting Transistors
TS-065398 — Emissive display technologies (e.g., OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays, which rely on external light sources, emissive displays generate light, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications, including mobile devices, AV/VR headsets, and wearable devices.
Although emissive displays are integrated into many electronic devices, they face some challenges. One of the primary issues is the integration of LEDs and electronic drivers when scaling into mesa dimensions. The mesa is a crucial parameter in display manufacturing as it determines the size of th…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Jamal-Eddine, Zane; Joishi, Chandan "Chandan"; Rahman, Sheikh Ifatur
- Licensing Officer: Zinn, Ryan
High-K Dielectric barriers to suppress internal photoemission photocurrents
TS-063471 —
In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; McGlone, Joseph "Joe"; Wriedt, Nathan
- Licensing Officer: Zinn, Ryan
Monolayer Etching of Wurtzite GaN/AlGaN/AlN Using Cyclic O2 Plasma and Atomic Ga/Al Flux Exposure
TS-063466 —
In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Dheenan, Ashok; Rahman, Sheikh Ifatur; Wriedt, Nathan
- Licensing Officer: Zinn, Ryan
Surface barrier engineering using AlGaO/GaO
TS-063001 — A new method of surface barrier engineering that introduces a linearly graded (AlxGa1-x)2O3 cap layer. This improves the Schottky barrier at the surface which results in a higher breakdown field.
Ga2O3 is a promising ultra-widebandgap semiconductor with many applications in power switching and RF electronics. Realizing those improvements requires efficient field management design to prevent premature breakdown due to electric field crowding at the device edges. There is a need to develop t…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Dhara, Sushovan
- Licensing Officer: Zinn, Ryan
Dielectric heterojunction device
TS-048644 —
The potential of different materials for vertical power switching is often assessed by calculating the Baliga Figure of Merit (BFOM). In the case of wide and ultra-wide bandgap materials, the high breakdown fields and the relatively good transport properties make the BFOM significantly higher than…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Moore, Wyatt; Xia, Zhanbo
- Licensing Officer: Zinn, Ryan
Field Effect Transistor for High Power Millimeter-Wave Applications
TS-042088 — Transistor structure with high breakdown voltage at high frequency operation
A new generation of high throughput, efficient communication networks and sensors can be enabled through the use of millimeter scale wave regimes. However, current semiconductor materials (such as AlGaN/GaN) have a reduction in breakdown voltage as operating frequency increases, which leads to low…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Wang, Caiyu; Xia, Zhanbo
- Licensing Officer: Zinn, Ryan
Method to enhance light extraction efficiency in tunnel-injected III-Nitrate ultraviolet LEDs
TS-037365 — A novel method to enhance the transverse-electric and transverse-magnetic polarized light via relfective surfaces on top of a tunnel junction based LED structure.
III-Nitride ultraviolet light emitting diodes (UV LEDs) have a variety of promising applications, including sterilization and water purification. Currently, UV LEDs use an absorbing p-GaN top layer for hole injection, which reduces light extraction efficiency to lower than 20%. UV light emissions …
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Akyol, Faith; Jamal-Eddine, Zane; Zhang, Yuewei
- Licensing Officer: Zinn, Ryan
Efficient Graded III-Nitride Nanowires
TS-014952 — A nanowire that overcomes defect formation normally found in LEDs, leading to higher charge density.
Unlike traditional light bulbs, Light Emitting Diodes (LEDs) use less power, last longer, and contain no environmentally harmful substances. However, LEDs struggle with technical errors, such as lattice mismatch and large resistances. As adoption increases, it is necessary to develop LEDs that are…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Myers, Roberto
- Licensing Officer: Zinn, Ryan
