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High Efficiency LED Designs Using Quantum Well Engineering
TS-057127 — Achieving high efficiency LEDs with green, amber and longer wavelengths using III-nitride/II-IV-nitride heterostructures as the active media.
Although extensive research and development over the past two decades has resulted in close to 100% external quantum efficiency (EQE) of InGaN based blue light emitting devices, efficiency of the longer visible wavelength emitting devices has remained relatively low. Spontaneous polarization origi…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Zhang, Kaitian
  • Licensing Officer: Ashouripashaki, Mandana

An Optical Fiber-Based Gamma Thermometer with Simple Design and Potential for Adjustable Axial Segmentation
TS-050215 — This invention proposes that an Optical Fiber-Based Gamma-Ray Calorimeter (OFBGC) sensor array can be designed, which does not require the distinct metallic thermal masses that are a part of the Optical Fiber-Based Gamma Thermometer (OFBGT).
As the world continues to grow and industrialize, the need for safe and efficient power is paramount. Currently, in nuclear fission reactors, there are Local Power Range Monitors (LPRM). They are ion chambers that contain fissile material. The electric current between their anode and cathode is mo…
  • College: College of Engineering (COE)
  • Inventors: Blue, Thomas E.; Birri, Anthony "Tony"
  • Licensing Officer: Ashouripashaki, Mandana

Quantum Well Design for Red-Emitting InGaN LEDs
TS-042441 — The quantum well design is incorporated within a red-emitting InGaN QW LED, an LED type that usually cannot efficiently emit wavelengths larger than blue/green. The LED can be incorporated into a same-material RGB platform for white LEDs, because the well design increases efficiency and decreases indium composition compared to similar wavelength InGaN LEDs.
Blue-emitting InGaN quantum well (QW) LEDs now have 69% external quantum efficiency, but increasing the emitted-wavelength decreases the efficiency significantly. The inversion asymmetry of the InGaN lattice increases the induced strain, which in turn increases the piezoelectric effect. Charge bui…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Karim, Md Rezaul
  • Licensing Officer: Ashouripashaki, Mandana

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