# of Displayed Technologies: 10 / 10

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High Efficiency LED Designs Using Quantum Well Engineering
TS-057127 — Achieving high efficiency LEDs with green, amber and longer wavelengths using III-nitride/II-IV-nitride heterostructures as the active media.
Although extensive research and development over the past two decades has resulted in close to 100% external quantum efficiency (EQE) of InGaN based blue light emitting devices, efficiency of the longer visible wavelength emitting devices has remained relatively low. Spontaneous polarization origi…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Zhang, Kaitian
  • Licensing Officer: Ashouripashaki, Mandana

Modular Dc Circuit Breaker with Integrated Energy Storage for Future Dc Networks
TS-051200 — Traditional AC distribution is not suitable for a wide range of applications in regard to efficiency, cost, and power carrying capacity compared to alternative distributions. Low voltage distribution suffers from high transmission losses due to higher current requirements necessitating thicker, he…
  • College: College of Engineering (COE)
  • Inventors: Wang, Jin; Na, Risha; Zhang, Yue
  • Licensing Officer: Hong, Dongsung

Method of forming low turn on and high breakdown voltage lateral diode.
TS-050626 — A hybrid Schottky and metal/high K dielectric/semiconductor contact to realize higher breakdown and low turn-on voltage for lateral diode based on wide bandgap semiconductors.
Practical realization of high breakdown fields in wide bandgap semiconductors such as GaN, SiC, typically requires the use of p-n junction, which require a turn-on voltage comparable to the bandgap of these semiconductors. For lower voltage applications, the forward or ON-state power loss due to h…
  • College: College of Engineering (COE)
  • Inventors: Rahman, Mohammad Wahidur "Wahidur"; Rajan, Siddharth
  • Licensing Officer: Hong, Dongsung

Scalable laser-assisted MOCVD chamber design with laser array input
TS-050244 — A design of scalable laser-assisted MOCVD chamber for III-nitrides and other semiconductors with a laser array input.
III-nitrides represent an important semiconductor material system for both optoelectronic and power electronic device applications. Advantages for III-nitrides include high electron saturation velocity, high critical electric field, high radiation resistance and decent thermal performance. Therefo…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Chen, Zhaoying
  • Licensing Officer: Ashouripashaki, Mandana

Fiber-to-fiber platform for multi-layer ferroelectric on insulator waveguide devices
TS-050208 — The invention is a fiber-to-fiber solution that allows the advantages of lithium niobate on insulator integrated photonic chips to be exploited in real world fielded systems.
Technology is advancing faster than ever, with major demand for instant communication and instant information among other industries. In order to facilitate this ever-growing industry, a technology called waveguides were invented. A waveguide confines the wave to propagate in one dimension, so tha…
  • College: College of Engineering (COE)
  • Inventors: Reano, Ronald; Nagy, Jonathan "Tyler"; Patton, Ryan; Prabhakar, Karan
  • Licensing Officer: Ashouripashaki, Mandana

Dielectric heterojunction device
TS-048644 — The potential of different materials for vertical power switching is often assessed by calculating the Baliga Figure of Merit (BFOM). In the case of wide and ultra-wide bandgap materials, the high breakdown fields and the relatively good transport properties make the BFOM significantly higher than…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Moore, Wyatt; Xia, Zhanbo
  • Licensing Officer: Hong, Dongsung

Capacitive Sensing Method for Integrated Circuit Identification and Authentication
TS-048641 — A method of authenticating an IC die’s origin and uniquely identifying each die with an intrinsic unclonable value through measurement of on-chip capacitance values
Hardware security in Integrated Circuit (IC) designs is of increasing importance in dealing with the insecure, expanding global supply chain of these parts. The ability to trace the origin of a die, combined with the capability to uniquely identify each die provides valuable quantitative measures …
  • College: College of Engineering (COE)
  • Inventors: Khalil, Waleed; Kines, Michael
  • Licensing Officer: Hong, Dongsung

A Lightweight Low Inductance Power Module with Insulated Baseplates
TS-048588 — A lightweight power module that reduces loop stray inductance while maintaining good electrical insulation and thermal dissipation.
In conventional power module structures, the die is attached to the substrate, usually direct bonding copper (DBC). The ceramic substrate layer provides electrical insulation between the circuit and cooling structure and attaches to a conductive baseplate material (Cu, Al, AlSiC) to dissipate heat…
  • College: College of Engineering (COE)
  • Inventors: Lyu, Xintong; Wang, Jin
  • Licensing Officer: Hong, Dongsung

Quantum Well Design for Red-Emitting InGaN LEDs
TS-042441 — The quantum well design is incorporated within a red-emitting InGaN QW LED, an LED type that usually cannot efficiently emit wavelengths larger than blue/green. The LED can be incorporated into a same-material RGB platform for white LEDs, because the well design increases efficiency and decreases indium composition compared to similar wavelength InGaN LEDs.
Blue-emitting InGaN quantum well (QW) LEDs now have 69% external quantum efficiency, but increasing the emitted-wavelength decreases the efficiency significantly. The inversion asymmetry of the InGaN lattice increases the induced strain, which in turn increases the piezoelectric effect. Charge bui…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Karim, Md Rezaul
  • Licensing Officer: Ashouripashaki, Mandana

Field Effect Transistor for High Power Millimeter-Wave Applications
TS-042088 — Transistor structure with high breakdown voltage at high frequency operation
A new generation of high throughput, efficient communication networks and sensors can be enabled through the use of millimeter scale wave regimes. However, current semiconductor materials (such as AlGaN/GaN) have a reduction in breakdown voltage as operating frequency increases, which leads to low…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Wang, Caiyu; Xia, Zhanbo
  • Licensing Officer: Hong, Dongsung

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