TS-068473 — The Need β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, there exists a critical challenge of growing high-quality, thick layers of gallium oxide (Ga2O3) on Ga2O3 substrates. Existing …

TS-067551 — Gallium Oxide (Ga2O3) is an inorganic compound with semi-conductivity properties (e.g., a large bandgap) that can be used for developing power electronics, UV photodetectors, solar cells, and sensors. βeta-Ga2O3, a polymorph, has a distinct advantage over other semiconductors that have high cri…

TS-065426 — Photodetectors are devices that detect light and convert it into an electrical signal. They operate based on the photoelectric effect, in which photons (light particles) strike the semiconductor material, creating electron-hole pairs that lead to the flow of electrical current that can be measured.

TS-065398 — Emissive display technologies (e.g., OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays, which rely on external light sources, emissive displays generate light, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications, including mobile devices, AV/VR headsets, and wearable devices.

TS-065135 — The use of wearable health devices has more than tripled in recent years due to the ability of these products to collect health data to detect potential health events (e.g., heart attacks), manage chronic diseases, and track physical activity. Wearable technologies have been shown to decrease the nu…

TS-063961 — The Need In the realm of power device technologies, addressing the growing demand for efficient, high-performance semiconductors is paramount. The current gap in the availability of a p-type β-Ga2O3 semiconductor poses a significant challenge, hindering the progress of device fabrication metho…

TS-063784 — The Need In the realm of power electronics, the industry is seeking advanced semiconductor materials that can address the ever-growing demand for high power density and high-frequency applications. Beta phase gallium oxide (β-Ga2O3) with an ultrawide bandgap (UWBG) of approximately 4.8 eV emer…

TS-063717 — The Need In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…

TS-063471 — In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…

TS-063466 — In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…

TS-063055 — New LWIR detector combining a dielectric resonator antenna (DRA) with a semiconductor absorber for improved signal, noise, and speed performance

TS-063051 — A stand-off gas detection system with active, laser-based sensing and imaging capabilities for commercial use

TS-063001 — A new method of surface barrier engineering that introduces a linearly graded (AlxGa1-x)2O3 cap layer. This improves the Schottky barrier at the surface which results in a higher breakdown field.

TS-062951 — The Need In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…

TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.

TS-062892 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.

TS-062847 — Avalanche photodiodes (APDs) that target a wavelength of 1550 nm have several applications ranging from optical communications to imaging to single photon detection. There is increasing interest in APDs for longer wavelengths. A distinctive feature of an APD is high sensitivity due to the gain ach…

TS-062691 — The continued push for high speed, low power, and compact solutions has given rise to the field of integrated optics/photonics, which aims to combine the high bandwidth and low loss transmission of fiber optic technology with the large device density and high production volume of modern microelect…

TS-062601 — Only a small fraction of the radio frequency (RF) energy transmitted by smartphones and other wireless devices is used to communicate with a wireless access point. It would be useful to collect or harvest the unused RF signals in order to convert them to direct current (DC) power and supplement th…

TS-062596 — Conventional rectifying circuit designs convert alternating-current (AC) signals into direct-current (DC) signals via the used of diodes. Low-barrier Schottky diodes are used in low AC power cases such as with ambient radio frequency (RF) signals. Ideally, each diode is only turned on during the p…

TS-062498 — Novel integrated inductor-based magnetohydrodynamic (MHD) pumps containing liquid metal coolant significantly enhance the thermal management of large-scale, complex electronic systems housed in confined spaces

TS-062494 — A novel magnetohydrodynamic (MHD) pump-based thermal management system design where integration of the cooling apparatus using electronic circuit interconnections achieves improved thermal management at a lower cost.

TS-062492 — Photonic integration is driven by demand for smaller size, lower cost, lower power consumption, easier assembly, higher reliability, and greater data density in modern photonic devices and systems. Among the many platforms, silicon photonics is particularly promising for photonic integration due t…

TS-062488 — Currently, the main method used to detect counterfeit integrated circuits (IC's) is a very simplistic approach based on visual inspection. Unfortunately, many sophisticated counterfeit IC's are indistinguishable from authentic since visually they look almost exactly the same. Dr. Robert…

TS-061850 — High-quality beta-gallium oxide (β-Ga2O3) based semi-insulating layers enable high power/high-frequency electronics, ultraviolet optoelectronics, and more.

TS-061832 — A portable and lightweight readout circuit designed for use with LRC-based wireless sensors and in conjunction with other commonly used devices (e.g., smartphone, laptop, and tablet)

TS-061767 — Current semiconductor materials used in power devices are reaching their performance limits. Inventors at OSU have developed a new method of fabricating thick β-(AlxGa1-x)2O3 films to enable low-Al content. The result is a lower cost of production and the ability to support next-generation optoelectronic and high-power device applications.

TS-057127 — Achieving high efficiency LEDs with green, amber and longer wavelengths using III-nitride/II-IV-nitride heterostructures as the active media.

TS-054326 — Magnetic skyrmions are unique and stable magnetic spin structures extensively studied in condensed matter physics. They are actively being developed due to their potential application in advanced memory chips. These skyrmion-based memory structures have advantages such as high density, low energy consumption, and resistance to disturbances, making them an attractive option for next-generation data storage.

TS-051200 — Traditional AC distribution is not suitable for a wide range of applications in regard to efficiency, cost, and power carrying capacity compared to alternative distributions. Low voltage distribution suffers from high transmission losses due to higher current requirements necessitating thicker, he…

TS-050244 — A design of scalable laser-assisted MOCVD chamber for III-nitrides and other semiconductors with a laser array input.

TS-050208 — The invention is a fiber-to-fiber solution that allows the advantages of lithium niobate on insulator integrated photonic chips to be exploited in real world fielded systems.

TS-049909 — A control method based upon properties of linear systems to manipulate the vibrational amplitudes and frequencies of structural systems by exploiting piecewise-linear (PWL) nonlinearities.

TS-048644 — The potential of different materials for vertical power switching is often assessed by calculating the Baliga Figure of Merit (BFOM). In the case of wide and ultra-wide bandgap materials, the high breakdown fields and the relatively good transport properties make the BFOM significantly higher than…

TS-048641 — A method of authenticating an IC die’s origin and uniquely identifying each die with an intrinsic unclonable value through measurement of on-chip capacitance values

TS-048588 — A lightweight power module that reduces loop stray inductance while maintaining good electrical insulation and thermal dissipation.

TS-042856 — A Framework and Automatization process designed to determine the functionality of Embedded Digital Devices.

TS-042441 — The quantum well design is incorporated within a red-emitting InGaN QW LED, an LED type that usually cannot efficiently emit wavelengths larger than blue/green. The LED can be incorporated into a same-material RGB platform for white LEDs, because the well design increases efficiency and decreases indium composition compared to similar wavelength InGaN LEDs.

TS-042088 — Transistor structure with high breakdown voltage at high frequency operation

TS-037378 — A radio receiver that operates without the need for locally generated reference signals.