TS-069780 — The Need Efficient thermal management is crucial in various industries, yet current solutions often fall short in terms of performance and adaptability. There is a significant need for a technology that can effectively control heat flow in bulk materials, enhancing the efficiency of systems ranging…

TS-068473 — The Need β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, there exists a critical challenge of growing high-quality, thick layers of gallium oxide (Ga2O3) on Ga2O3 substrates. Existing …

TS-067551 — Gallium Oxide (Ga2O3) is an inorganic compound with semi-conductivity properties (e.g., a large bandgap) that can be used for developing power electronics, UV photodetectors, solar cells, and sensors. βeta-Ga2O3, a polymorph, has a distinct advantage over other semiconductors that have high cri…

TS-065426 — Photodetectors are devices that detect light and convert it into an electrical signal. They operate based on the photoelectric effect, in which photons (light particles) strike the semiconductor material, creating electron-hole pairs that lead to the flow of electrical current that can be measured.

TS-065398 — Emissive display technologies (e.g., OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays, which rely on external light sources, emissive displays generate light, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications, including mobile devices, AV/VR headsets, and wearable devices.

TS-065135 — The use of wearable health devices has more than tripled in recent years due to the ability of these products to collect health data to detect potential health events (e.g., heart attacks), manage chronic diseases, and track physical activity. Wearable technologies have been shown to decrease the nu…

TS-063961 — The Need In the realm of power device technologies, addressing the growing demand for efficient, high-performance semiconductors is paramount. The current gap in the availability of a p-type β-Ga2O3 semiconductor poses a significant challenge, hindering the progress of device fabrication metho…

TS-063784 — The Need In the realm of power electronics, the industry is seeking advanced semiconductor materials that can address the ever-growing demand for high power density and high-frequency applications. Beta phase gallium oxide (β-Ga2O3) with an ultrawide bandgap (UWBG) of approximately 4.8 eV emer…

TS-063717 — The Need In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…

TS-063471 — In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…

TS-063466 — In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…

TS-063055 — New LWIR detector combining a dielectric resonator antenna (DRA) with a semiconductor absorber for improved signal, noise, and speed performance

TS-063051 — A stand-off gas detection system with active, laser-based sensing and imaging capabilities for commercial use

TS-063001 — A new method of surface barrier engineering that introduces a linearly graded (AlxGa1-x)2O3 cap layer. This improves the Schottky barrier at the surface which results in a higher breakdown field.

TS-062951 — The Need In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…

TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.

TS-062892 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.

TS-062847 — Avalanche photodiodes (APDs) that target a wavelength of 1550 nm have several applications ranging from optical communications to imaging to single photon detection. There is increasing interest in APDs for longer wavelengths. A distinctive feature of an APD is high sensitivity due to the gain ach…

TS-062691 — The continued push for high speed, low power, and compact solutions has given rise to the field of integrated optics/photonics, which aims to combine the high bandwidth and low loss transmission of fiber optic technology with the large device density and high production volume of modern microelect…

TS-062601 — Only a small fraction of the radio frequency (RF) energy transmitted by smartphones and other wireless devices is used to communicate with a wireless access point. It would be useful to collect or harvest the unused RF signals in order to convert them to direct current (DC) power and supplement th…