# of Displayed Technologies: 10 / 19

Applied Category Filter (Click To Remove): Communications & Networking


High-K Dielectric barriers to suppress internal photoemission photocurrents
TS-063471 — In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; McGlone, Joseph "Joe"; Wriedt, Nathan
  • Licensing Officer: Ashouripashaki, Mandana

Monolayer Etching of Wurtzite GaN/AlGaN/AlN Using Cyclic O2 Plasma and Atomic Ga/Al Flux Exposure
TS-063466 — In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…
  • College: College of Engineering (COE)
  • Inventors: Rajan, Siddharth; Dheenan, Ashok; Rahman, Sheikh Ifatur; Wriedt, Nathan
  • Licensing Officer: Ashouripashaki, Mandana

System and Method of Securing Vehicle-Pavement Interaction (Tago)
TS-063169 — Road safety is a paramount concern. Unpredictable road conditions, such as bumps and uneven surfaces, can pose significant risks to drivers. There is a pressing need for a technology that can sense and alert drivers about these road surface conditions in real-time, enhancing safety and improving t…
  • College: College of Engineering (COE)
  • Inventors: Srinivasan, Kannan; Sun, Wei
  • Licensing Officer: Ashouripashaki, Mandana

Broadband Sliding-Mode Outphasing Power Amplifier with High Efficiency
TS-063155 — With the rapid growth in modern communication, transmitter systems must use a wider fraction of the spectrum, to support the continuously increasing data rate. In addition, signals with large peak-to-average power ratio (PAPR) are used in communication systems to increase the spectral efficiency. …
  • College: College of Engineering (COE)
  • Inventors: Roblin, Patrick; Mikrut, Dominic
  • Licensing Officer: Ashouripashaki, Mandana

3D subwavelength photonic detector coupled with dielectric resonator antenna
TS-063055 — New LWIR detector combining a dielectric resonator antenna (DRA) with a semiconductor absorber for improved signal, noise, and speed performance
Long Wavelength Infrared (LWIR) detectors are crucial in various fields, but traditional detectors face significant drawbacks in terms of size, thermal noise, and coupling efficiencies. Current detectors use cryogenic cooling in the form of mercury cadmium telluride (MCT), a significant drawback d…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Ball, Christopher; Kazemi, Alireza; Ronningen, Theodore; Shu, Qingyuan
  • Licensing Officer: Ashouripashaki, Mandana

Counterattacking Smart Contract Exploits: An Active Defense Approach
TS-063027 — The Need Smart contracts have revolutionized the way transactions are conducted, but their unique nature makes them susceptible to exploitation. Despite extensive efforts in vulnerability identification, exploitable vulnerabilities persist, resulting in substantial financial losses. To mitigate thi…
  • College: College of Engineering (COE)
  • Inventors: LIN, ZHIQIANG; Morales, Marcelo
  • Licensing Officer: Hampton, Andrew

Antimonide based Separate Absorption Charge and Multiplication Avalanche Photodiode
TS-062892 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise an…
  • College: College of Engineering (COE)
  • Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
  • Licensing Officer: Ashouripashaki, Mandana

A Novel MIMO Architecture for Multi-user Power line communication
TS-062843 — This MIMO-PLC architecture is the first scalable MIMO architecture on a single power line. It improves the throughput for power line communication (PLC) by utilizing the existing power delivery infrastructure and allows for high data rates in rural areas.
Home networking and the Internet of Things (IoT), especially voice and video communications, require high throughput, reliable coverage, and sustainable connectivity. However, the performance is dramatically decreased when the wireless signals go through the walls and ceilings. The densely deploye…
  • College: College of Engineering (COE)
  • Inventors: Srinivasan, Kannan; Chen, Bo; Guruvenkata, Vivek; Sun, Wei
  • Licensing Officer: Ashouripashaki, Mandana

A lightweight, miniaturized, and portable readout circuits for tracking LRC-based wireless sensor
TS-061832 — A portable and lightweight readout circuit designed for use with LRC-based wireless sensors and in conjunction with other commonly used devices (e.g., smartphone, laptop, and tablet)
The Need Conventional vector network analyzers are bulky and expensive and tend to limit the ability to be used for daily tracing or high-frequency health status tracking in people. To overcome this and other limitations present in the cumbersome designs of today, compact-sized devices that take ad…
  • College: College of Engineering (COE)
  • Inventors: Li, Jinghua; Liu, Tzu Li
  • Licensing Officer: Ashouripashaki, Mandana

Development of thick β-(AlxGa1-x)2O3 films with low-Al content for vertical power devices
TS-061767 — Current semiconductor materials used in power devices are reaching their performance limits. Inventors at OSU have developed a new method of fabricating thick β-(AlxGa1-x)2O3 films to enable low-Al content. The result is a lower cost of production and the ability to support next-generation optoelectronic and high-power device applications.
The Need Currently, β-Ga2O3 is used as the semiconductor material for developing next-generation electronic devices to support various high-power applications ranging from telecommunication to electric vehicles (EVs). Yet, the use of β-Ga2O3 is introducing significant production costs…
  • College: College of Engineering (COE)
  • Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
  • Licensing Officer: Randhawa, Davinder

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