Method for developing thick β-Ga2O3 films on (001) Ga2O3 substrates using (AlxGa1-x)2O3 buffer layer
TS-068473 — The Need
β-Ga2O3 has spurred substantial interest in semiconductors and transistors in high-power/high-frequency electronics and ultraviolet optoelectronics. However, there exists a critical challenge of growing high-quality, thick layers of gallium oxide (Ga2O3) on Ga2O3 substrates. Existing …
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Meng, Lingyu; Yu, Dong Su
- Licensing Officer: Randhawa, Davinder
A device for improving the breakdown performance of gallium oxide semiconductors
TS-067551 — Gallium Oxide (Ga2O3) is an inorganic compound with semi-conductivity properties (e.g., a large bandgap) that can be used for developing power electronics, UV photodetectors, solar cells, and sensors. βeta-Ga2O3, a polymorph, has a distinct advantage over other semiconductors that have high cri…
- College: College of Engineering (COE)
- Inventors: Dheenan, Ashok; Dhara, Sushovan; Rajan, Siddharth
- Licensing Officer: Zinn, Ryan
Open Circuit Voltage Photodetector
TS-065426 — Photodetectors are devices that detect light and convert it into an electrical signal. They operate based on the photoelectric effect, in which photons (light particles) strike the semiconductor material, creating electron-hole pairs that lead to the flow of electrical current that can be measured.
Existing photodetectors are susceptible to various noise sources, such as thermal and electronic. The noise can degrade the signal-to-noise ratio and affect the accuracy of measurements, particularly in low-light conditions.
This technology is an open-circuit voltage photodetector (OCVP) that…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Fuller, Earl; Kazemi, Alireza; Khalil, Waleed; Ronningen, TJ; Smith, Dale "Shane"; Specht, Teressa; Tantawy, Ramy "Ramy"
- Licensing Officer: Zinn, Ryan
Monolithically Integrated Tunnel Junction-Based GaN Light Emitting Transistors
TS-065398 — Emissive display technologies (e.g., OLEDs) are display technologies that emit light directly to produce images. Unlike reflective displays, which rely on external light sources, emissive displays generate light, resulting in vibrant and high-contrast visuals. These next-generation displays are used in several applications, including mobile devices, AV/VR headsets, and wearable devices.
Although emissive displays are integrated into many electronic devices, they face some challenges. One of the primary issues is the integration of LEDs and electronic drivers when scaling into mesa dimensions. The mesa is a crucial parameter in display manufacturing as it determines the size of th…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Jamal-Eddine, Zane; Joishi, Chandan "Chandan"; Rahman, Sheikh Ifatur
- Licensing Officer: Zinn, Ryan
Bio-Matched Horn: A Novel 1-9 GHz On-Body Antenna for Low-Loss Biomedical Telemetry with Implants
TS-065135 — The use of wearable health devices has more than tripled in recent years due to the ability of these products to collect health data to detect potential health events (e.g., heart attacks), manage chronic diseases, and track physical activity. Wearable technologies have been shown to decrease the nu…
- College: College of Engineering (COE)
- Inventors: Blauert, John; Kiourti, Asimina
- Licensing Officer: Randhawa, Davinder
Methods to improve the jitter and time walk of integrated constant fraction discriminators
TS-064826 — The Need
Accurate measurements of energy and time-of-arrival of photons, particles, or ionizing radiation are crucial for identifying individual particles and enhancing spatial and temporal resolution in various systems. Technologies such as Light Detection and Ranging (LiDAR), positron emission to…
- College: College of Arts & Sciences
- Inventors: Kagan, Harris; Abusareya, Mo'men; Khalil, Waleed; Smith, Dale "Shane"
- Licensing Officer: Dahlman, Jason "Jay"
Invention of ultra-wide bandgap oxide semiconductor with p-type conductivity
TS-063961 — The Need
In the realm of power device technologies, addressing the growing demand for efficient, high-performance semiconductors is paramount. The current gap in the availability of a p-type β-Ga2O3 semiconductor poses a significant challenge, hindering the progress of device fabrication metho…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
Ultrawide bandgap oxide semiconductor LiGaO2 with p-type conductivity for power device applications
TS-063784 — The Need
In the realm of power electronics, the industry is seeking advanced semiconductor materials that can address the ever-growing demand for high power density and high-frequency applications. Beta phase gallium oxide (β-Ga2O3) with an ultrawide bandgap (UWBG) of approximately 4.8 eV emer…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Zhang, Kaitian
- Licensing Officer: Randhawa, Davinder
Suppressing background carbon incorporation using laser-assisted MOCVD growth of nitride-based semiconductors
TS-063717 — The Need
In the world of semiconductor material systems, the demand for advancements in optoelectronic and power electronic devices is ever-growing. The fabrication of semiconductor films, crucial for these applications, primarily relies on epitaxy technologies such as hydride vapor phase epitaxy (…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Chen, Zhaoying; Zhang, Yuxuan
- Licensing Officer: Randhawa, Davinder
High-K Dielectric barriers to suppress internal photoemission photocurrents
TS-063471 —
In an increasingly digital world, the demand for efficient and reliable photodetectors is paramount. These devices are critical for a variety of applications, from medical imaging to defense systems. However, traditional photodetectors often struggle with low UV-visible rejection, limiting their e…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; McGlone, Joseph "Joe"; Wriedt, Nathan
- Licensing Officer: Zinn, Ryan
Monolayer Etching of Wurtzite GaN/AlGaN/AlN Using Cyclic O2 Plasma and Atomic Ga/Al Flux Exposure
TS-063466 —
In the rapidly evolving world of semiconductor technology, there is a growing demand for efficient and precise methods of etching Gallium Nitride (GaN)-based semiconductors. Traditional wet and dry etching processes often damage the GaN, compromising the quality and performance of the final produc…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Dheenan, Ashok; Rahman, Sheikh Ifatur; Wriedt, Nathan
- Licensing Officer: Zinn, Ryan
3D subwavelength photonic detector coupled with dielectric resonator antenna
TS-063055 — New LWIR detector combining a dielectric resonator antenna (DRA) with a semiconductor absorber for improved signal, noise, and speed performance
Long Wavelength Infrared (LWIR) detectors are crucial in various fields, but traditional detectors face significant drawbacks in terms of size, thermal noise, and coupling efficiencies. Current detectors use cryogenic cooling in the form of mercury cadmium telluride (MCT), a significant drawback d…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Ball, Christopher; Kazemi, Alireza; Ronningen, TJ; Shu, Qingyuan
- Licensing Officer: Zinn, Ryan
Laser Imaging of Gases for Real-Time Determination of Concentration and Location
TS-063051 — A stand-off gas detection system with active, laser-based sensing and imaging capabilities for commercial use
There is a critical need for a reliable, cost-effective, and safe method to detect gas leaks, particularly in gas lines to ensure the safety of service providers and customers. Distribution companies receive over 100,000 calls per year responding to gas odors, indicating potential leaks. The major…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Ball, Christopher; Fink, Douglas "Rudy"; Fuller, Earl; Mooney, Douglas; Ringel, Brett; Ronningen, TJ
- Licensing Officer: Randhawa, Davinder
Surface barrier engineering using AlGaO/GaO
TS-063001 — A new method of surface barrier engineering that introduces a linearly graded (AlxGa1-x)2O3 cap layer. This improves the Schottky barrier at the surface which results in a higher breakdown field.
Ga2O3 is a promising ultra-widebandgap semiconductor with many applications in power switching and RF electronics. Realizing those improvements requires efficient field management design to prevent premature breakdown due to electric field crowding at the device edges. There is a need to develop t…
- College: College of Engineering (COE)
- Inventors: Rajan, Siddharth; Dhara, Sushovan
- Licensing Officer: Zinn, Ryan
Substrates for vertical power devices
TS-062951 — The Need
In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer developmen…
- College: College of Engineering (COE)
- Inventors: Zhao, Hongping; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu
- Licensing Officer: Randhawa, Davinder
GaAsSb-AlGaAsSb Heterostructure Avalanche Photodiode
TS-062893 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise and …
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
- Licensing Officer: Randhawa, Davinder
Antimonide based Separate Absorption Charge and Multiplication Avalanche Photodiode
TS-062892 — A room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure.
An APD is a semiconductor-based analog of the photomultiplier. APDs exploit the impact ionization phenomenon and transform infrared (IR) light (l > 850 nm) into photocurrent. APDs have wide applicability; however, existing APDs have insufficient sensitivity and relatively high excess noise an…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Jung, Hyemin; Lee, Seunghyun
- Licensing Officer: Randhawa, Davinder
Lateral Interband Type-II Engineered (LITE) Detector
TS-062847 —
Avalanche photodiodes (APDs) that target a wavelength of 1550 nm have several applications ranging from optical communications to imaging to single photon detection. There is increasing interest in APDs for longer wavelengths. A distinctive feature of an APD is high sensitivity due to the gain ach…
- College: College of Engineering (COE)
- Inventors: Krishna, Sanjay; Kodati, Sri Harsha; Lee, Seunghyun; Ronningen, TJ
- Licensing Officer: Randhawa, Davinder
Light Source in Silicon Photonics
TS-062691 —
The continued push for high speed, low power, and compact solutions has given rise to the field of integrated optics/photonics, which aims to combine the high bandwidth and low loss transmission of fiber optic technology with the large device density and high production volume of modern microelect…
- College: College of Engineering (COE)
- Inventors: Reano, Ronald; Patton, Ryan; Wood, Michael
- Licensing Officer: Zinn, Ryan
RF Energy Harvesting Wireless Mobile Device Charger
TS-062601 —
Only a small fraction of the radio frequency (RF) energy transmitted by smartphones and other wireless devices is used to communicate with a wireless access point. It would be useful to collect or harvest the unused RF signals in order to convert them to direct current (DC) power and supplement th…
- College: College of Engineering (COE)
- Inventors: Chen, Chi-Chih; Koksal, C. Emre; Shroff, Ness; Tallos, Roland
- Licensing Officer: Zinn, Ryan
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